elektronische bauelemente SMG2321P -4.1a , -20v , r ds(on) 79 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature sc-59 surface mount package saves board space. ? fast switching speed. ? high performance trench technology. ? low gate charge 7.2nc. application dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sc-59 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v t a =25c -4.1 continuous drain current 1 t a =70c i d -3.3 a pulsed drain current 2 i dm 10 a continuous source current (diode conduction) 1 i s 0.46 a t a =25c 1.25 power dissipation 1 t a =70c p d 0.8 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 5 sec 100 maximum junction to ambient 1 steady-state r ja 150 c/w notes: 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. ? ? ? ? ? ? millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
elektronische bauelemente SMG2321P -4.1a , -20v , r ds(on) 79 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -0.4 - - v v ds =v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 8v - - -1 v ds = -16v, v gs =0 zero gate voltage drain current i dss - - -10 a v ds = -16v, v gs =0, t j =55c on-state drain current 1 i d(on) -5 - - a v ds = -5v, v gs = -4.5v - - 0.079 v gs = -4.5v, i d = -4.1a drain-source on-resistance 1 r ds(on) - - 0.110 ? v gs = -2.5v, i d = -3.2a forward transconductance 1 g fs - 9 - s v ds = -5v, , i d = -1.25a diode forward voltage v sd - -0.65 - v i s = -0.46a, v gs =0 dynamic 2 total gate charge q g - 7.2 - gate-source charge q gs - 1.7 - gate-drain charge q gd - 1.5 - nc i d = -4.1a v ds = -10v v gs = -4.5v input capacitance c iss - 520 - output capacitance c oss - 130 - reverse transfer capacitance c rss - 70 - pf v ds =15v, v gs =0v, f=1mhz turn-on delay time td (on) - 8 - rise time t r - 18 - turn-off delay time td (off) - 52 - fall time t f - 39 - ns v dd = -10v v gen = -4.5v r g =6 ? i l = -1a notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not subject to production testing.
elektronische bauelemente SMG2321P -4.1a , -20v , r ds(on) 79 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMG2321P -4.1a , -20v , r ds(on) 79 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
|
